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| STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m [ P-Channel Enhancement Mode Power Mos.FET Description The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT2603 is universally used for all commercial industrial surface mount application . Features * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0 10 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Continuous Drain Current (Note 3) Pulsed Drain Current (Note 1,2) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 Ratings -20 12 -5 -4 -20 2 0.016 -55~+150 Unit V V A A A W W/ C C Thermal Data Parameter Thermal Resistance Junction-ambient (Note 3) (Max) Symbol Rthj-a Ratings 62.5 Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2603 Elektronische Bauelemente -5A, -20V,RDS(ON) 65m[ P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -20 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS= 12V VDS=-20V,VGS=0 VDS=-16V,VGS=0 VGS=-10V, ID=-4.5A o -0.1 _ _ _ _ -0.5 _ _ _ _ -1.2 100 -1 -10 53 65 120 250 16 _ _ _ _ _ _ 10.6 2.32 3.68 5.9 3.6 32.4 2.6 740 Static Drain-Source On-Resistance 2 _ RDS(ON) _ _ m[ VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A ID=-4.2A VDS=-16V VGS=-4.5V Total Gate Charge 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 nC _ _ _ _ VDD=-15V ID=-4.2A nS VGS=-10V RG=6 [ RD=3.6[ 1200 _ _ 167 126 9 pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-5V, ID=-2.8A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VDS Trr Qrr Min. _ Typ. _ 27.7 22 Max. -1.2 Unit V Test Condition IS=-1.2A, VGS=0V. Is=-4.2A, VGS=0V dl/dt=100A/us _ _ _ _ nS nC Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. O 3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 STT2603 Elektronische Bauelemente -5A, -20V,RDS(ON) 65m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 STT2603 Elektronische Bauelemente -5A, -20V,RDS(ON) 65m [ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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